The BD681 transistor is plastic, medium-power silicon NPN Darlington transistors can be used as output devices in complementary general-purpose amplifier applications..
The MD1802FX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage..
The MJE3055T PNP silicon power transistor is designed for power switching circuits and general-purpose amplifiers. The complementary PNP type is MJE2955T..
2N6292 is a NPN Medium Power Transistor for General Purpose Amplifier and Switching Applications. Collector-Emitter Volt (Vceo): 70V, Collector Current (Ic): 7.0A, Power Dissipation (Ptot): 40W.
2SC2229 - C2229 Silicon NPN Triple Diffused Type Transistor for Black and White TV Video Output Applications, High-Voltage Switching Applications, Driver Stage Audio Amplifier Applications etc. Collector-Emitter Volt (Vceo): 150V, Collector-Base Volt (Vcbo): 200V, Collector Current (Ic): 50mA, hfe: 70-240 @ 10mA, Low output capacitance: Cob = 5.0 pF (max), High transition frequency: fT = 120 MHz (typ.).
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2SC2482 - C2482 Silicon NPN Epitaxial Transistor Type Transistor for High-Voltage Switching and Amplifier Applications, Color TV Horizontal Driver Applications, Color TV Chroma Output Applications etc.
Collector-Emitter Volt (Vceo): 300V,Collector-Base Volt (Vcbo): 300V,Collector Current (Ic): 100mA,hfe: 30-150 @ 20mA,Marking: C2482 instead of 2SC2482..
S9013 NPN Small Signal Transistor Collector-Emitter Volt (Vceo): 25V, Collector-Base Volt (Vcbo): 45V, Collector Current (Ic): 0.5A, hfe: 64-300 @ 50mA, Power Dissipation (Ptot): 625mW, Current-Gain-Bandwidth (ftotal): 150MHz..
The S9014 is an NPN epitaxial silicon planar transistor designed for use in the audio output stage and converter / inverter circuits. Collector-Emitter Volt (Vceo): 45V, Collector-Base Volt (Vcbo): 50V, Collector Current (Ic): 100mA, hfe: 200-600 @ 1mA, Power Dissipation (Ptot): 450mW, Current-Gain-Bandwidth (ftotal): 150MHz.-270MHz..
The S9018 is an NPN epitaxial silicon planar transistor designed for use in the audio output stage and converter / inverter circuits. Collector-Emitter Volt (Vceo): 18V, Collector-Base Volt (Vcbo): 25V, Collector Current (Ic): 50mA, hfe: 28-270 @ 1mA..